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GP401DDS18
GP401DDS18
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
DS5272-3.0 January 2001
FEATURES
s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 400A 800A
APPLICATIONS
s s s s
High Reliability Inverters Motor Controllers
12(C2) 2(C2) 4(E2) 1(E1) 7(C1)
11(G2) 10(E2) 3(C1) 5(E1) 6(G1)
Traction Drives Resonant Converters
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
5 6 3 7 8 1
ORDERING INFORMATION
Order As: GP401DDS18 Note: When ordering, please use the whole part number.
9 12 11 10 4 2
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 70C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 20 400 800 3000 4000 Units V V A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 80 C/kW Min. Max. 42 Units C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 400A IF = 400A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 2.6 3.3 2.2 2.3 45 20 Max. 1 12 2 6.5 3.2 4 400 800 2.5 2.6 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 50% VCES, dIF/dt = 3000A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 330 180 500 200 200 80 250 70 Max. 1100 400 250 650 400 230 100 Units ns ns mJ ns ns mJ C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 50% VCES, dIF/dt = 2500A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1010 450 250 600 310 200 110 300 190 Max. 1200 500 320 800 400 270 150 Units ns ns mJ ns ns mJ C A mJ
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 800 700 600
Collector current, Ic - (A)
Collector current, Ic - (A)
Vge = 20/15/12/10V 800 Common emitter Tcase = 125C
Common emitter Tcase = 25C
700 600 500 400 300 200 100 0 0
500 400 300 200 100 0 0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
1.0
2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V)
6.0
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
400 360 320
Turn-on energy, EON - (mJ)
300
Tcase = 25C VGE = 15V VCE = 900V
280 260 240
Turn-on energy, EON - (mJ)
Tcase = 125C VGE = 15V VCE = 900V A B C
220 200 180 160 140 120 100 80 60
280 240 200 160 120 80 40 0 0 A: Rg = 4.7 B: Rg = 3.3 C: Rg = 2.2 50 100 150 200 250 300 Collector current, IC - (A) 350 400 A B C
40 20 0 0 50 100
A: Rg = 4.7 B: Rg = 3.3 C: Rg = 2.2 150 200 250 300 Collector current, IC - (A) 350 400
Fig. 5 Typical turn-on energy vs collector current
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
200 180 160
Turn-off energy, EOFF - (mJ)
300
Tcase = 25C VGE = -15V VCE = 900V A B C
275 250 225
Turn-off energy, EOFF - (mJ)
Tcase = 125C VGE = 15V VCE = 900V
A B C
140 120 100 80 60 40 20 0 0 A: Rg = 4.7 B: Rg = 3.3 C: Rg = 2.2 50 100 150 250 300 200 Collector current, IC - (A) 350 400
200 175 150 125 100 75 50 25 0 0 50 100 A: Rg = 4.7 B: Rg = 3.3 C: Rg = 2.2 150 250 300 200 Collector current, IC - (A) 350 400
Fig. 7 Typical turn-off energy vs collector current
Fig. 8 Typical turn-off energy vs collector current
60 VGE = 15V VCE = 900V Rg = 2.2 Tcase = 125C
1400
50
1200
Diode turn-off energy, Eoff(diode) - (mJ)
Tcase = 125C VGE = 15V VCE = 900V Rg = 2.2 td(off)
1000
40
Switching times, ts - (ns)
800 td(on)
30
Tcase = 25C
600
20
400
tf tr
10
200
0 0 50 100 150 200 250 300 350 400 Collector current, IC - (A)
0 0
50
100
150 200 250 300 Collector current, IC - (A)
350
400
Fig. 9 Typical diode turn-off energy vs collector current
Fig. 10 Typical switching times
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
800 700 Tj = 25C 600
Foward current, IF - (A)
Collector current, IC - (A)
1000 900 800 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg(min) = 4.3 Rg(min) : Minimum recommended value
500 Tj = 125C 400 300 200 100 0 0
100 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
1200 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
Fig. 10 Diode typical forward characteristics
Fig. 12 Reverse bias safe operating area
10000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Diode Transistor
1000
Collector current, IC - (A)
IC max. (single pulse)
10
IC
100
m . ax D C (c tin on ) us uo
50s
100s
tp = 1ms
1
10
1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
0.1
1
10
100 Pulse width, tp - (ms)
1000
10000
Fig. 13 Forward bias safe operating area
Fig.14 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
900 800
Inverter phase current, IC(PK) - (A)
700
PWM Sine Wave Power Factor = 0.9, Modulation Index =1
600
700
DC collector current, IC - (A)
500
600 500 400 300 200 100 0 1 fmax - (kHz) 10 20 Conditions: Tj = 125C, Tcase = 75C Rg = 2.2, VCC = 900V
400
300
200
100
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 15 3 Phase inverter operating frequency
Fig. 16 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 15 15 62
13
5
65
6
24
3
16
1
11.85
7 8 9 4 2
18
12
26
13
11 10 14 11.5 35 20 4x M8 6x O7
6x M4
38 28
5 140 Nominal weight: 1600g Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.3 57 65
57
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GP401DDS18
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP401DDS18
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5272-3 Issue No. 3.0 January 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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